MOS
MT34P50/B/S
P-Channel Low Qg MOSFET
- 40V,-50A,17mΩ R (on)
High performance trench technology for extremely lowTO-220FB-3L TO-263-2LHigh power and current handing capabilityD
R (ON) and fast switching speed.
Low Gate Charge
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improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, lowDS '&'&SULPDU\EULGJH '&'&6\QFKURQRXVUHFWLILFDWLRQ3RZHU0DQDJHPHPHQWIRU,QYHUWHU6\VWHPV S
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STO-252-2LAbsolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter Symbol Limit UnitDrain-Source Voltage VDS -40 V
Gate-Source Voltage VGS ±20 V
Drain Current-Continuous ID A
Drain Current-Continuous(TC=100℃) ID (100℃) -25 A
Pulsed Drain Current IDM A
Maximum Power Dissipation PD 80 W
Single pulse avalanche energy
(Note 5) EAS 212 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃R D S (on)=17mΩ at VG S = -10V,ID=
