SC2302          20V N-Channel Enhancement-Mode mosFet

Vos= 20V

RDS(oN), Vg(@-25V, Is@2.0A-90mQ2@TYP

RDS(ON VE(@4.5V, Is@3. 2A-65mQ2@TYP

Features

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Maximum Ratings and Thermal Characteristics(TA=25 C unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source volt

Continuous drain Current

A

Pulsed drain current

8

TA=25℃

125

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

55 to 150

Junction-to-Ambient Thermal Resistance(PCB mounted)

140

℃/W

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature

2. 1-in 2oz Cu PCB board